Abstract
Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 107 and a low subthreshold swing of 60-120 mV dec -1 are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with surface silanization and biasing with a solution gate rather than a backgate. pH sensing with a linear response over a range of 2-9 is achieved using these devices. Selective detection of bovine serum albumin at concentrations as low as 0.1 femtomolar is demonstrated.
Original language | English (US) |
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Pages (from-to) | 1952-1961 |
Number of pages | 10 |
Journal | Lab on a Chip |
Volume | 11 |
Issue number | 11 |
DOIs | |
State | Published - Jun 7 2011 |
ASJC Scopus subject areas
- Bioengineering
- Biochemistry
- General Chemistry
- Biomedical Engineering