TY - JOUR
T1 - Selenium-Containing Fused Bicyclic Heterocycle Diselenolodiselenole
T2 - Field Effect Transistor Study and Structure-Property Relationship
AU - Debnath, Sashi
AU - Chithiravel, Sundaresan
AU - Sharma, Sagar
AU - Bedi, Anjan
AU - Krishnamoorthy, Kothandam
AU - Zade, Sanjio S.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/7/20
Y1 - 2016/7/20
N2 - The first application of the diselenolodiselenole (C4Se4) heterocycle as an active organic field effect transistor materials is demonstrated here. C4Se4 derivatives (2a-2d) were obtained by using a newly developed straightforward diselenocyclization protocol, which includes the reaction of diynes with selenium powder at elevated temperature. C4Se4 derivatives exhibit strong donor characteristics and planar structure (except 2d). The atomic force microscopic analysis and thin-film X-ray diffraction pattern of compounds 2a-2d indicated the formation of distinct crystalline films that contain large domains. A scanning electron microscopy study of compound 2b showed development of symmetrical grains with an average diameter of 150 nm. Interestingly, 2b exhibited superior hole mobility, approaching 0.027 cm2 V-1 s-1 with a transconductance of 9.2 μS. This study correlate the effect of stacking, Se···Se intermolecular interaction, and planarity with the charge transport properties and performance in the field effect transistor devices. We have shown that the planarity in C4Se4 derivatives was achieved by varying the end groups attached to the C4Se4 core. In turn, optoelectronic properties can also be tuned for all these derivatives by end-group variation.
AB - The first application of the diselenolodiselenole (C4Se4) heterocycle as an active organic field effect transistor materials is demonstrated here. C4Se4 derivatives (2a-2d) were obtained by using a newly developed straightforward diselenocyclization protocol, which includes the reaction of diynes with selenium powder at elevated temperature. C4Se4 derivatives exhibit strong donor characteristics and planar structure (except 2d). The atomic force microscopic analysis and thin-film X-ray diffraction pattern of compounds 2a-2d indicated the formation of distinct crystalline films that contain large domains. A scanning electron microscopy study of compound 2b showed development of symmetrical grains with an average diameter of 150 nm. Interestingly, 2b exhibited superior hole mobility, approaching 0.027 cm2 V-1 s-1 with a transconductance of 9.2 μS. This study correlate the effect of stacking, Se···Se intermolecular interaction, and planarity with the charge transport properties and performance in the field effect transistor devices. We have shown that the planarity in C4Se4 derivatives was achieved by varying the end groups attached to the C4Se4 core. In turn, optoelectronic properties can also be tuned for all these derivatives by end-group variation.
KW - charge transport
KW - diselenocyclization
KW - diselenolodiselenole
KW - organic field effect transistor
KW - selenium
KW - spectroelectrochemistry
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U2 - 10.1021/acsami.6b02154
DO - 10.1021/acsami.6b02154
M3 - Article
C2 - 27353123
AN - SCOPUS:84979561714
SN - 1944-8244
VL - 8
SP - 18222
EP - 18230
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 28
ER -