(Keynote) devices in CMOS for terahertz circuits and systems

K. K. O; Z. Ahmad; W. Choi; N. Sharm; J. Zhang; Q. Zhong; D. Y. Kim; Z. Y. Chen; Y. Zhang; R. Han; D. Shim; S. Sankaran; E. Y. Seok; Sandeep Kshattry; C. Cao; C. Mao; R. M. Schueler; I. R. Medvedev; D. J. Lary; H. J. Nam; P. Raskin; F. C. Delucia; J. P. McMillan; C. F. Neese; I. Kim; I. Momson; P. Yellswarapu; S. Dong; P. Byreddy; Z. Chen

doi:10.1149/08004.0003ecst

(Keynote) devices in CMOS for terahertz circuits and systems

K. K. O, Z. Ahmad, W. Choi, N. Sharm, J. Zhang, Q. Zhong, D. Y. Kim, Z. Y. Chen, Y. Zhang, R. Han, D. Shim, S. Sankaran, E. Y. Seok, Sandeep Kshattry, C. Cao, C. Mao, R. M. Schueler, I. R. Medvedev, D. J. Lary, H. J. NamP. Raskin, F. C. Delucia, J. P. McMillan, C. F. Neese, I. Kim, I. Momson, P. Yellswarapu, S. Dong, P. Byreddy, Z. Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

CMOS (Complementary Metal Oxide Semiconductor) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. Signal generation up to 1.3 THz, coherent detection up to 410 GHz and incoherent detection up to ∼10 THz have been demonstrated using CMOS integrated circuits. Furthermore, a highly integrated rotational spectroscopy transceiver operating up to near 300 GHz and imaging arrays operating near 1 THz have been demonstrated in CMOS. Signal generation as well as coherent detection up to 5 THz as well as incoherent detection beyond 40 THz with sufficient performance for practical applications should be possible in CMOS especially with minor process modifications to optimize the performance of MOS varactors and Schottky barrier diodes.

Original language	English (US)
Title of host publication	ECS Transactions
Editors	J. Murota, C. L. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, P. Chin
Publisher	Electrochemical Society Inc.
Pages	3-15
Number of pages	13
Edition	4
ISBN (Electronic)	9781607688211
ISBN (Print)	9781623324735
DOIs	https://doi.org/10.1149/08004.0003ecst
State	Published - 2017
Event	10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States Duration: Oct 1 2017 → Oct 5 2017

Publication series

Name	ECS Transactions
Number	4
Volume	80
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
Country/Territory	United States
City	National Harbor
Period	10/1/17 → 10/5/17

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/08004.0003ecst

Cite this

O, K. K., Ahmad, Z., Choi, W., Sharm, N., Zhang, J., Zhong, Q., Kim, D. Y., Chen, Z. Y., Zhang, Y., Han, R., Shim, D., Sankaran, S., Seok, E. Y., Kshattry, S., Cao, C., Mao, C., Schueler, R. M., Medvedev, I. R., Lary, D. J., ... Chen, Z. (2017). (Keynote) devices in CMOS for terahertz circuits and systems. In J. Murota, C. L. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, & P. Chin (Eds.), ECS Transactions (4 ed., pp. 3-15). (ECS Transactions; Vol. 80, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08004.0003ecst

(Keynote) devices in CMOS for terahertz circuits and systems. / O, K. K.; Ahmad, Z.; Choi, W. et al.
ECS Transactions. ed. / J. Murota; C. L. Claeys; H. Iwai; M. Tao; S. Deleonibus; A. Mai; K. Shiojima; P. Chin. 4. ed. Electrochemical Society Inc., 2017. p. 3-15 (ECS Transactions; Vol. 80, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

O, KK, Ahmad, Z, Choi, W, Sharm, N, Zhang, J, Zhong, Q, Kim, DY, Chen, ZY, Zhang, Y, Han, R, Shim, D, Sankaran, S, Seok, EY, Kshattry, S, Cao, C, Mao, C, Schueler, RM, Medvedev, IR, Lary, DJ, Nam, HJ, Raskin, P, Delucia, FC, McMillan, JP, Neese, CF, Kim, I, Momson, I, Yellswarapu, P, Dong, S, Byreddy, P & Chen, Z 2017, (Keynote) devices in CMOS for terahertz circuits and systems. in J Murota, CL Claeys, H Iwai, M Tao, S Deleonibus, A Mai, K Shiojima & P Chin (eds), ECS Transactions. 4 edn, ECS Transactions, no. 4, vol. 80, Electrochemical Society Inc., pp. 3-15, 10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting, National Harbor, United States, 10/1/17. https://doi.org/10.1149/08004.0003ecst

@inproceedings{ac4c510219994806b3407ef02eeb327f,

title = "(Keynote) devices in CMOS for terahertz circuits and systems",

abstract = "CMOS (Complementary Metal Oxide Semiconductor) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. Signal generation up to 1.3 THz, coherent detection up to 410 GHz and incoherent detection up to ∼10 THz have been demonstrated using CMOS integrated circuits. Furthermore, a highly integrated rotational spectroscopy transceiver operating up to near 300 GHz and imaging arrays operating near 1 THz have been demonstrated in CMOS. Signal generation as well as coherent detection up to 5 THz as well as incoherent detection beyond 40 THz with sufficient performance for practical applications should be possible in CMOS especially with minor process modifications to optimize the performance of MOS varactors and Schottky barrier diodes.",

author = "O, {K. K.} and Z. Ahmad and W. Choi and N. Sharm and J. Zhang and Q. Zhong and Kim, {D. Y.} and Chen, {Z. Y.} and Y. Zhang and R. Han and D. Shim and S. Sankaran and Seok, {E. Y.} and Sandeep Kshattry and C. Cao and C. Mao and Schueler, {R. M.} and Medvedev, {I. R.} and Lary, {D. J.} and Nam, {H. J.} and P. Raskin and Delucia, {F. C.} and McMillan, {J. P.} and Neese, {C. F.} and I. Kim and I. Momson and P. Yellswarapu and S. Dong and P. Byreddy and Z. Chen",

note = "Funding Information: The works presented are supported by SRC through TxACE at the University of Texas at Dallas, TI, Samsung Electronics, C2S2, DARPA and NASA. Publisher Copyright: {\textcopyright} The Electrochemical Society.; 10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",

year = "2017",

doi = "10.1149/08004.0003ecst",

language = "English (US)",

isbn = "9781623324735",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "3--15",

editor = "J. Murota and Claeys, {C. L.} and H. Iwai and M. Tao and S. Deleonibus and A. Mai and K. Shiojima and P. Chin",

booktitle = "ECS Transactions",

edition = "4",

}

TY - GEN

T1 - (Keynote) devices in CMOS for terahertz circuits and systems

AU - O, K. K.

AU - Ahmad, Z.

AU - Choi, W.

AU - Sharm, N.

AU - Zhang, J.

AU - Zhong, Q.

AU - Kim, D. Y.

AU - Chen, Z. Y.

AU - Zhang, Y.

AU - Han, R.

AU - Shim, D.

AU - Sankaran, S.

AU - Seok, E. Y.

AU - Kshattry, Sandeep

AU - Cao, C.

AU - Mao, C.

AU - Schueler, R. M.

AU - Medvedev, I. R.

AU - Lary, D. J.

AU - Nam, H. J.

AU - Raskin, P.

AU - Delucia, F. C.

AU - McMillan, J. P.

AU - Neese, C. F.

AU - Kim, I.

AU - Momson, I.

AU - Yellswarapu, P.

AU - Dong, S.

AU - Byreddy, P.

AU - Chen, Z.

N1 - Funding Information: The works presented are supported by SRC through TxACE at the University of Texas at Dallas, TI, Samsung Electronics, C2S2, DARPA and NASA. Publisher Copyright: © The Electrochemical Society.

PY - 2017

Y1 - 2017

N2 - CMOS (Complementary Metal Oxide Semiconductor) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. Signal generation up to 1.3 THz, coherent detection up to 410 GHz and incoherent detection up to ∼10 THz have been demonstrated using CMOS integrated circuits. Furthermore, a highly integrated rotational spectroscopy transceiver operating up to near 300 GHz and imaging arrays operating near 1 THz have been demonstrated in CMOS. Signal generation as well as coherent detection up to 5 THz as well as incoherent detection beyond 40 THz with sufficient performance for practical applications should be possible in CMOS especially with minor process modifications to optimize the performance of MOS varactors and Schottky barrier diodes.

AB - CMOS (Complementary Metal Oxide Semiconductor) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. Signal generation up to 1.3 THz, coherent detection up to 410 GHz and incoherent detection up to ∼10 THz have been demonstrated using CMOS integrated circuits. Furthermore, a highly integrated rotational spectroscopy transceiver operating up to near 300 GHz and imaging arrays operating near 1 THz have been demonstrated in CMOS. Signal generation as well as coherent detection up to 5 THz as well as incoherent detection beyond 40 THz with sufficient performance for practical applications should be possible in CMOS especially with minor process modifications to optimize the performance of MOS varactors and Schottky barrier diodes.

UR - http://www.scopus.com/inward/record.url?scp=85050035616&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050035616&partnerID=8YFLogxK

U2 - 10.1149/08004.0003ecst

DO - 10.1149/08004.0003ecst

M3 - Conference contribution

AN - SCOPUS:85050035616

SN - 9781623324735

T3 - ECS Transactions

SP - 3

EP - 15

BT - ECS Transactions

A2 - Murota, J.

A2 - Claeys, C. L.

A2 - Iwai, H.

A2 - Tao, M.

A2 - Deleonibus, S.

A2 - Mai, A.

A2 - Shiojima, K.

A2 - Chin, P.

PB - Electrochemical Society Inc.

T2 - 10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -

(Keynote) devices in CMOS for terahertz circuits and systems

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this