Cu-related complexes in silicon

S. K. Estreicher; J. L. Hastings

doi:10.1016/S0921-5107(98)00289-X

Cu-related complexes in silicon

S. K. Estreicher, J. L. Hastings

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

Hartree-Fock calculations of Cu⁺ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu⁺, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.

Original language	English (US)
Pages (from-to)	155-158
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	58
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(98)00289-X
State	Published - Feb 12 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2d48a61b658c4aecbb00614159aea746,

title = "Cu-related complexes in silicon",

abstract = "Hartree-Fock calculations of Cu+ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.",

author = "Estreicher, {S. K.} and Hastings, {J. L.}",

note = "Funding Information: This works was supported in part by the grant D-1126 from the R.A. Welch Foundation and by the contract XAD-7-17652-01 from the National Renewable Energy Laboratory. ",

year = "1999",

month = feb,

day = "12",

doi = "10.1016/S0921-5107(98)00289-X",

language = "English (US)",

volume = "58",

pages = "155--158",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1",

}

TY - JOUR

T1 - Cu-related complexes in silicon

AU - Estreicher, S. K.

AU - Hastings, J. L.

N1 - Funding Information: This works was supported in part by the grant D-1126 from the R.A. Welch Foundation and by the contract XAD-7-17652-01 from the National Renewable Energy Laboratory.

PY - 1999/2/12

Y1 - 1999/2/12

N2 - Hartree-Fock calculations of Cu+ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.

AB - Hartree-Fock calculations of Cu+ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.

UR - http://www.scopus.com/inward/record.url?scp=0345504135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345504135&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(98)00289-X

DO - 10.1016/S0921-5107(98)00289-X

M3 - Conference article

AN - SCOPUS:0345504135

SN - 0921-5107

VL - 58

SP - 155

EP - 158

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

Cu-related complexes in silicon

Abstract

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