Measurements of quantized conductance in gallium as a function of temperature

B. B. Lewis; K. G. Vandervoort; R. D. Foster

doi:10.1016/S0038-1098(98)00607-3

Measurements of quantized conductance in gallium as a function of temperature

B. B. Lewis, K. G. Vandervoort, R. D. Foster

Radiation Oncology

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Abstract

Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2 K, just slightly below and far below the bulk melting point of gallium. We find that the conductance is significantly dependent on temperature and find a moderate conductance peak at 1G_o (2e²/h) that increases in intensity with decreasing temperature. At 4.2 K, a second conductance peak at 2G_o is observed. We attribute our observations to gallium's unique orthorhombic crystal structure and a significant increase in atomic disorder at temperatures near the melting point.

Original language	English (US)
Pages (from-to)	525-530
Number of pages	6
Journal	Solid State Communications
Volume	109
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1098(98)00607-3
State	Published - Feb 17 1999

Keywords

A. Metals
C. Scanning tunneling microscopy
D. Electronic transport

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(98)00607-3

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title = "Measurements of quantized conductance in gallium as a function of temperature",

abstract = "Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2 K, just slightly below and far below the bulk melting point of gallium. We find that the conductance is significantly dependent on temperature and find a moderate conductance peak at 1Go (2e2/h) that increases in intensity with decreasing temperature. At 4.2 K, a second conductance peak at 2Go is observed. We attribute our observations to gallium's unique orthorhombic crystal structure and a significant increase in atomic disorder at temperatures near the melting point.",

keywords = "A. Metals, C. Scanning tunneling microscopy, D. Electronic transport",

author = "Lewis, {B. B.} and Vandervoort, {K. G.} and Foster, {R. D.}",

note = "Funding Information: This research was supported by an award from Research Corporation. The authors also wish to thank the Western Carolina University Office of Research and Graduate Studies for their support via a 1998 Summer Research Grant and, in addition, Wai Kwok and George Crabtree at Argonne National Laboratory for the loan of equipment. B.B.L. gratefully acknowledges support from a Western Carolina University Undergraduate Research Award. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "1999",

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doi = "10.1016/S0038-1098(98)00607-3",

language = "English (US)",

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pages = "525--530",

journal = "Solid State Communications",

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TY - JOUR

T1 - Measurements of quantized conductance in gallium as a function of temperature

AU - Lewis, B. B.

AU - Vandervoort, K. G.

AU - Foster, R. D.

N1 - Funding Information: This research was supported by an award from Research Corporation. The authors also wish to thank the Western Carolina University Office of Research and Graduate Studies for their support via a 1998 Summer Research Grant and, in addition, Wai Kwok and George Crabtree at Argonne National Laboratory for the loan of equipment. B.B.L. gratefully acknowledges support from a Western Carolina University Undergraduate Research Award. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 1999/2/17

Y1 - 1999/2/17

N2 - Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2 K, just slightly below and far below the bulk melting point of gallium. We find that the conductance is significantly dependent on temperature and find a moderate conductance peak at 1Go (2e2/h) that increases in intensity with decreasing temperature. At 4.2 K, a second conductance peak at 2Go is observed. We attribute our observations to gallium's unique orthorhombic crystal structure and a significant increase in atomic disorder at temperatures near the melting point.

AB - Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2 K, just slightly below and far below the bulk melting point of gallium. We find that the conductance is significantly dependent on temperature and find a moderate conductance peak at 1Go (2e2/h) that increases in intensity with decreasing temperature. At 4.2 K, a second conductance peak at 2Go is observed. We attribute our observations to gallium's unique orthorhombic crystal structure and a significant increase in atomic disorder at temperatures near the melting point.

KW - A. Metals

KW - C. Scanning tunneling microscopy

KW - D. Electronic transport

UR - http://www.scopus.com/inward/record.url?scp=0033075160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033075160&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(98)00607-3

DO - 10.1016/S0038-1098(98)00607-3

M3 - Article

AN - SCOPUS:0033075160

SN - 0038-1098

VL - 109

SP - 525

EP - 530

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Measurements of quantized conductance in gallium as a function of temperature

Abstract

Keywords

ASJC Scopus subject areas

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