Influences of annealing temperature on structural, magnetic and optical properties of Zn0.98V0.02O nanoparticles

Hongbo Liu; Yang Liu; Lili Yang; Zhenguo Chen; Xu Zhang; Jinghai Yang; Zhiping Zhou

doi:10.1016/j.mssp.2014.07.008

Influences of annealing temperature on structural, magnetic and optical properties of Zn_0.98V_0.02O nanoparticles

Hongbo Liu, Yang Liu, Lili Yang, Zhenguo Chen, Xu Zhang, Jinghai Yang, Zhiping Zhou

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The Zn_0.98V_0.02O nanoparticles were synthesized by the sol-gel method. The relationship between the annealing temperature (600 °C, 700°C and 800°C) and the structural, magnetic and optical properties of the obtained samples was studied. The results showed that Zn ions were partially substituted by V ions. The V doped ZnO nanoparticles annealed at 600°C and 700°C were single phase wurtize ZnO structure and they were ferromagnetic at room temperature. On the contrary, the sample annealed at 800 °C had a secondary phase of Zn₃V₃O₈. Therefore it was not saturated even in the field of 10,000 Oe due to the coexistence of ferromagnetic and paramagnetic materials. Photoluminescence results indicated that defects probably were the origin of ferromagnetism in V doped ZnO.

Original language	English (US)
Pages (from-to)	309-313
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.07.008
State	Published - Nov 2014

Keywords

Diluted magnetic semiconductors
Ferromagnetism
V doped ZnO

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2014.07.008

Cite this

@article{e8124235133941f8bc5fed115cc49ce0,

title = "Influences of annealing temperature on structural, magnetic and optical properties of Zn0.98V0.02O nanoparticles",

abstract = "The Zn0.98V0.02O nanoparticles were synthesized by the sol-gel method. The relationship between the annealing temperature (600 °C, 700°C and 800°C) and the structural, magnetic and optical properties of the obtained samples was studied. The results showed that Zn ions were partially substituted by V ions. The V doped ZnO nanoparticles annealed at 600°C and 700°C were single phase wurtize ZnO structure and they were ferromagnetic at room temperature. On the contrary, the sample annealed at 800 °C had a secondary phase of Zn3V3O8. Therefore it was not saturated even in the field of 10,000 Oe due to the coexistence of ferromagnetic and paramagnetic materials. Photoluminescence results indicated that defects probably were the origin of ferromagnetism in V doped ZnO.",

keywords = "Diluted magnetic semiconductors, Ferromagnetism, V doped ZnO",

author = "Hongbo Liu and Yang Liu and Lili Yang and Zhenguo Chen and Xu Zhang and Jinghai Yang and Zhiping Zhou",

note = "Funding Information: This work is supported by the National Natural Science Foundation of China (Grant nos. 11204104 , 61178074 , 61008051 , 61308095 , 61378085 and 11254001 ), Program for New Century Excellent Talents in University ( NCET-13-0824 and NCET-11-0981 ), Program for the Development of Science and Technology of Jilin Province (Item nos. 201201083 , 201205078 , 20110415 , and 201115219 ) and the Twentieth Five-Year Program for Science and Technology of Education Department of Jilin Province (Item nos. 20140156 and 20140147 ).",

year = "2014",

month = nov,

doi = "10.1016/j.mssp.2014.07.008",

language = "English (US)",

volume = "27",

pages = "309--313",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Influences of annealing temperature on structural, magnetic and optical properties of Zn0.98V0.02O nanoparticles

AU - Liu, Hongbo

AU - Liu, Yang

AU - Yang, Lili

AU - Chen, Zhenguo

AU - Zhang, Xu

AU - Yang, Jinghai

AU - Zhou, Zhiping

N1 - Funding Information: This work is supported by the National Natural Science Foundation of China (Grant nos. 11204104 , 61178074 , 61008051 , 61308095 , 61378085 and 11254001 ), Program for New Century Excellent Talents in University ( NCET-13-0824 and NCET-11-0981 ), Program for the Development of Science and Technology of Jilin Province (Item nos. 201201083 , 201205078 , 20110415 , and 201115219 ) and the Twentieth Five-Year Program for Science and Technology of Education Department of Jilin Province (Item nos. 20140156 and 20140147 ).

PY - 2014/11

Y1 - 2014/11

N2 - The Zn0.98V0.02O nanoparticles were synthesized by the sol-gel method. The relationship between the annealing temperature (600 °C, 700°C and 800°C) and the structural, magnetic and optical properties of the obtained samples was studied. The results showed that Zn ions were partially substituted by V ions. The V doped ZnO nanoparticles annealed at 600°C and 700°C were single phase wurtize ZnO structure and they were ferromagnetic at room temperature. On the contrary, the sample annealed at 800 °C had a secondary phase of Zn3V3O8. Therefore it was not saturated even in the field of 10,000 Oe due to the coexistence of ferromagnetic and paramagnetic materials. Photoluminescence results indicated that defects probably were the origin of ferromagnetism in V doped ZnO.

AB - The Zn0.98V0.02O nanoparticles were synthesized by the sol-gel method. The relationship between the annealing temperature (600 °C, 700°C and 800°C) and the structural, magnetic and optical properties of the obtained samples was studied. The results showed that Zn ions were partially substituted by V ions. The V doped ZnO nanoparticles annealed at 600°C and 700°C were single phase wurtize ZnO structure and they were ferromagnetic at room temperature. On the contrary, the sample annealed at 800 °C had a secondary phase of Zn3V3O8. Therefore it was not saturated even in the field of 10,000 Oe due to the coexistence of ferromagnetic and paramagnetic materials. Photoluminescence results indicated that defects probably were the origin of ferromagnetism in V doped ZnO.

KW - Diluted magnetic semiconductors

KW - Ferromagnetism

KW - V doped ZnO

UR - http://www.scopus.com/inward/record.url?scp=84905028500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905028500&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.07.008

DO - 10.1016/j.mssp.2014.07.008

M3 - Article

AN - SCOPUS:84905028500

SN - 1369-8001

VL - 27

SP - 309

EP - 313

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -