1/f noise of silicon nanowire BioFETs

Nitin K. Rajan; David A. Routenberg; Jin Chen; Mark A. Reed

doi:10.1109/LED.2010.2047000

1/f noise of silicon nanowire BioFETs

Nitin K. Rajan, David A. Routenberg, Jin Chen, Mark A. Reed

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10 ^-3 is comparable to the values reported for submicrometer MOSFETs with a metal/HfO₂ gate stack.

Original language	English (US)
Article number	5464364
Pages (from-to)	615-617
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2047000
State	Published - Jun 2010
Externally published	Yes

Keywords

Etching
Low-frequency noise (LFN)
MOSFET
Nanowire (NW)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2047000

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title = "1/f noise of silicon nanowire BioFETs",

abstract = "The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10 -3 is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.",

keywords = "Etching, Low-frequency noise (LFN), MOSFET, Nanowire (NW)",

author = "Rajan, {Nitin K.} and Routenberg, {David A.} and Jin Chen and Reed, {Mark A.}",

note = "Funding Information: Manuscript received February 10, 2010; revised March 10, 2010. Date of publication May 14, 2010; date of current version May 26, 2010. This work was supported in part by the National Institutes of Health under Grant R01EB008260. The first two authors contributed equally to this work. The review of this letter was arranged by Editor L. Selmi.",

year = "2010",

month = jun,

doi = "10.1109/LED.2010.2047000",

language = "English (US)",

volume = "31",

pages = "615--617",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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T1 - 1/f noise of silicon nanowire BioFETs

AU - Rajan, Nitin K.

AU - Routenberg, David A.

AU - Chen, Jin

AU - Reed, Mark A.

N1 - Funding Information: Manuscript received February 10, 2010; revised March 10, 2010. Date of publication May 14, 2010; date of current version May 26, 2010. This work was supported in part by the National Institutes of Health under Grant R01EB008260. The first two authors contributed equally to this work. The review of this letter was arranged by Editor L. Selmi.

PY - 2010/6

Y1 - 2010/6

N2 - The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10 -3 is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.

AB - The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10 -3 is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.

KW - Etching

KW - Low-frequency noise (LFN)

KW - MOSFET

KW - Nanowire (NW)

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DO - 10.1109/LED.2010.2047000

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

1/f noise of silicon nanowire BioFETs

Abstract

Keywords

ASJC Scopus subject areas

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